Zhe Huang
Weisheng Zhao
ABSTRACT
In the post-Moore era, in order to solve the problem of von Neumann bottleneck and memory wall caused by separation of memory and processor, in-memory-processing (IMP) technique has aroused great attention. Novel non-volatile memory (NVM) based on spintronic devices shows promise for satisfying the needs of low-power consumption and high speed for IMP. However, most spintronic memories based on magnetic tunnel junctions (MTJs) can only implement simple and specific logic functions due to the limits of single device and circuit structure. Otherwise, performing logic functions in memory generates vast dynamic power consumption during frequent reading and writing processes because of the high resistance of miniaturized MTJ. In this paper, we propose an in-memory highly reconfigurable logic circuit based on diode-assisted enhanced magnetoresistance (DEMR) device. Our circuit can realize 16 different logic functions with extremely limited circuit area benefiting from the special structure of DEMR device. With appropriate adjustment of control bit and current, the proposed circuit can further implement complex functions like full adder. The proposed reconfigurable circuit can flexibly meet the performance requirements in different scenarios and will contribute a lot for future in-memory chip design.
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Index Terms
- An In-memory Highly Reconfigurable Logic Circuit Based on Diode-assisted Enhanced Magnetoresistance Device
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