The Application of SiC Devices in Photovoltaic Grid-connected Inverters
Authors: 
Yongping Li, Ling Li, Hao Wu, Chunyan Jiang, Chaozhang Liu, Shumin Yan, Xinhua Chen, Guodong Feng, Huanyun ZhangAuthors Info & Claims
Yongping Li, Ling Li, Hao Wu, Chunyan Jiang, Chaozhang Liu, Shumin Yan, Xinhua Chen, Guodong Feng, Huanyun ZhangAuthors Info & ClaimsPages 523 - 527
Abstract
The continuous development of photovoltaic grid-connected technology extended the requirement on higher power density and higher efficiency for power converters. In this respect, the application of silicon carbide (SiC) high-power power electronic devices in photovoltaic inverter systems can simplify the system design, simplify the heat dissipation device, reduce energy loss, reduce the volume and weight of the system, and thus greatly reduce the cost. The boost module is a key component of the inverter. In this work, 1200V/20A SiC diodes and SiC MOSFETs are applied to the boost circuit of a single-phase photovoltaic grid-connected inverter, which increases the overall efficiency of the inverter by more than 0.5%.
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- The Application of SiC Devices in Photovoltaic Grid-connected Inverters
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Published In
October 2020
566 pages
ISBN:9781450375535
DOI:10.1145/3421766
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Association for Computing Machinery
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Published: 26 October 2020
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AIAM2020
AIAM2020: 2nd International Conference on Artificial Intelligence and Advanced Manufacture
October 15 - 17, 2020
Manchester, United Kingdom
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AIAM2020 Paper Acceptance Rate 100 of 285 submissions, 35%;
Overall Acceptance Rate 100 of 285 submissions, 35%
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