Bo Wang
ABSTRACT
Avalanche breakdown voltage of insulated gate bipolar transistor(IGBT) is an important electrical parameter in the device manual, which reflects the forward blocking voltage capability of the device. Based on IGBT cell structure and PN junction avalanche breakdown principle, this paper analyzes the calculation expressions of avalanche breakdown voltage of IGBT with three common structures: non-punch-through(NPT), punch-through(PT) and field-terminated(FS). Due to the existence of distributed inductance in the circuit and device, a voltage spike is easy to occur when the IGBT is turned off. The voltage and current waveforms during avalanche breakdown are analyzed. Finally, the avalanche breakdown mechanism of IGBT is verified by experiments.
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Cross Ref
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Index Terms
- Mechanism Analysis and Experimental Verification of IGBT Avalanche Breakdown
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