Bo Wang
ABSTRACT
The electrical breakdown failure of insulated gate bipolar transistor(IGBT) is one of the common failure mechanisms. Because of the existence of stray inductance distributed inside the circuit and device, excessive voltage spike occurs during the turnoff transient, which leads to overvoltage breakdown. Based on the adiabatic process analysis of IGBT electric breakdown, the failure mechanism of IGBT electric breakdown is obtained. Because the IGBT module is composed of IGBT chip and anti-parallel diode, it is difficult to judge the fault location only by the failure waveform. Therefore, this paper analyzes the failure mode of IGBT chip and anti-parallel diode by opening the package observation and real-time observation by infrared thermal imager, which shows that the chip has stronger ability to withstand electric breakdown than diode and the failure location is smaller.
- Chamund D J, Coulbeck L, Newcombe D R, et al. High Power Density IGBT Module for High Reliability Application[C]. Proceeding of IPEMC, 2009: 274--280.Google Scholar
- Dupont L, Khatir Z, Lefebvre S, et al. Effects of Metallization Thickness of Ceramic Substrates on the Reliability of Power Assemblies under High Temperature Cycling [J]. Microelectronics Reliability, 2006, 46: 1766--1771.Google ScholarCross Ref
- Abbate C, Busatto G, Iannuzzo F. IGBT RBSOA Non-destructive Testing Methods: Analysis and Discussion[J]. Microelectronics Reliability, 2010, 50: 1731--1737.Google ScholarCross Ref
- Abbate C, Busatto G, Manzo R, et al. Experimental Optimisation of High Power IGBT Modules Performances Working at the Edges of their Safe Operating Area[C]. Proceedings of PESC, 2004: 2588--2592.Google Scholar
- LU Hua, Bailey C, YIN Chun Yan. Design for Reliability of Power Electronics Modules[J]. Microelectronics Reliability, 2009, 49: 1250--1255.Google ScholarCross Ref
- Benmansour A, Azzopardi S, Martin J C, et al. Trench IGBT Failure Mechanisms Evolution with Temperature and Gate Resistance under Various Short-circuit Conditions[J]. Microelectronics Reliability, 2007, 47: 1730--1734.Google ScholarCross Ref
- Lefranc P, Planson D, Morel H. Analysis of the Dynamic Avalanche of Punch through Insulated Gate Bipolar Transistor (PT-IGBT)[J]. Solid-State Electronics, 2009, 53: 944--954.Google ScholarCross Ref
- Ogura T, Ninomiya H, Sugiyama K, et al. Turn-off Switching Analysis Considering Dynamic Avalanche Effect for Low Turn-off Loss Highvoltage IGBTs[J]. IEEE Transactions on Electron Devices, 2004, 51(4): 629--635.Google ScholarCross Ref
Index Terms
- Transient Characteristic Analysis of IGBT Voltage Breakdown Failure
Recommendations
Mechanism Analysis and Experimental Verification of IGBT Avalanche Breakdown
EITCE '20: Proceedings of the 2020 4th International Conference on Electronic Information Technology and Computer EngineeringAvalanche breakdown voltage of insulated gate bipolar transistor(IGBT) is an important electrical parameter in the device manual, which reflects the forward blocking voltage capability of the device. Based on IGBT cell structure and PN junction ...
Thermal Failure Analysis of IGBT Based on Collector Leakage Current
EITCE '20: Proceedings of the 2020 4th International Conference on Electronic Information Technology and Computer EngineeringCollector leakage current is an important electrical parameter in insulated gate bipolar transistor manual, which reflects its forward blocking characteristics. In this paper, based on IGBT structure and PN junction reverse current principle, by ...
Shielding region effects on a trench gate IGBT
In this paper we introduced the shielding region concept in order to relieve the electric field concentrated on the trench bottom corner. The shielded trench gate insulated gate bipolar transistor (IGBT) is a trench gate IGBT with a P+shielding region ...
Comments