ABSTRACT
The parameters of class E power amplifier are optimized for achieving zero voltage switching (ZVS) condition in the magnetically coupled resonance wireless power transmission (MCR-WPT) system. Considering that the working frequency of MCR-WPT is very high, the influence of the parasitic capacitance of the MOSFET can't be neglected. The optimized value of capacitor and inductor are obtained by circuit theory. The performance of the ZVS with the optimized value is verified with circuit simulation by evaluating the output power and efficiency of MCR-WPT system. Under the condition that the coupling coefficient (k) is 0.3, the transmission efficiency of the WPT system was as high as 87%, which was increased by more than 20% on the original basis.
- Y. Chen, H. Zhang, C. Shin, C. Jo, S. Park and D. Kim, "An Efficiency Optimization-Based Asymmetric Tuning Method of Double-Sided LCC Compensated WPT System for Electric Vehicles," in IEEE Transactions on Power Electronics, vol. 35, no. 11, pp. 11475--11487, Nov. 2020, doi: 10.1109/TPEL.2020.2984712.Google ScholarCross Ref
- A. Mediano, P. M. Gaudo, and C. K. Bernal, "Design of class E amplifier with nonlinear and linear shunt capacitances for any duty cycle," IEEE Trans. Microw. Theory Tech., vol. 55, no. 3, pp. 484--492, Mar. 2007.Google ScholarCross Ref
- M. Hayati, A. Lotfi, M. K. Kazimierczuk, and H. Sekiya, "Analysis and design of class E power amplifier with MOSFET parasitic linear and nonlinear capacitances at any duty ratio," IEEE Trans. Power Electron., vol. 28, no. 11, pp. 5222--5232, Nov. 2013.Google ScholarCross Ref
- T. Suetsugu and M. K. Kazimierczuk, "Maximum operating frequency of class E amplifier at any duty ratio," IEEE Trans. Circuits Syst. II, Exp. Briefs, vol. 55, no. 8, pp. 768--770, Aug. 2008.Google ScholarCross Ref
- Yang, D.Tian, J.Won, S.Zhou, B.Cheng, Z.Hu, B. Optimal Position of the Intermediate Coils in a Magnetic Coupled Resonant Wireless Power Transfer System. Energies 2019, 12, 3991.Google Scholar
- X. Wei, H. Sekiya, S. Kuroiwa, T. Suetsugu and M. K. Kazimierczuk, "Design of Class-E Amplifier With MOSFET Linear Gate-to-Drain and Nonlinear Drain-to-Source Capacitances," in IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 58, no. 10, pp. 2556--2565, Oct. 2011, doi: 10.1109/TCSI.2011.2123490.Google ScholarCross Ref
- M. Hayati, A. Lotfi, M. K. Kazimierczuk and H. Sekiya, "Analysis, Design, and Implementation of the Class-E ZVS Power Amplifier With MOSFET Nonlinear Drain-to-Source Parasitic Capacitance at any Grading Coefficient," in IEEE Transactions on Power Electronics, vol. 29, no. 9, pp. 4989--4999, Sept. 2014, doi: 10.1109/TPEL.2013.2286160.Google ScholarCross Ref
- D. K. Choi and S. I. Long, "The effect of transistor feedback ca-pacitance in class-E power amplifiers," IEEE Trans. Circuits Syst. I, Fumdam. Theory Appl., vol. 50, no. 12, pp. 1556--1559, Dec. 2003.Google ScholarCross Ref
- MARIAN K K, DARIUSZ C. Resonant powerconverters[M]. New Jersey: Wiley-IEEE Press, 2011.Google Scholar
Index Terms
- Circuit parameter optimization of class E power amplifier for wireless power transmission applications
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