ChenWei Liang
ABSTRACT
Based on the 0.5μm GaN HEMT (High Electron Mobility Transistor) process platform of the Nanjing Electronic Device Institute, the design of a broadband power amplifier in the 1.3 to 4 GHz band is introduced. The design of broadband matching circuit is fully based on the advantage of high power density of GaN devices. Based on load pull test data, circuit simulation and actual circuit layout design are carried out. A small size power amplifier with output power greater than 40dBm and drain efficiency greater than 51.6% has been successfully developed in the operating frequency band.
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