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Characterization Summary of Performance, Reliability, and Threshold Voltage Distribution of 3D Charge-Trap NAND Flash Memory

Published: 10 March 2022 Publication History

Abstract

Solid-state drive (SSD) gradually dominates in the high-performance storage scenarios. Three-dimension (3D) NAND flash memory owning high-storage capacity is becoming a mainstream storage component of SSD. However, the interferences of the new 3D charge-trap (CT) NAND flash are getting unprecedentedly complicated, yielding to many problems regarding reliability and performance. Alleviating these problems needs to understand the characteristics of 3D CT NAND flash memory deeply. To facilitate such understanding, in this article, we delve into characterizing the performance, reliability, and threshold voltage (Vth) distribution of 3D CT NAND flash memory. We make a summary of these characteristics with multiple interferences and variations and give several new insights and a characterization methodology. Especially, we characterize the skewed (Vth) distribution, (Vth) shift laws, and the exclusive layer variation in 3D NAND flash memory. The characterization is the backbone of designing more reliable and efficient flash-based storage solutions.

References

[1]
Dulcardo Arteaga, Jorge Cabrera, Jing Xu, Swaminathan Sundararaman, and Ming Zhao. 2016. CloudCache: On-demand flash cache management for cloud computing. In 14th USENIX Conference on File and Storage Technologies (FAST’16). 355–369.
[2]
Yu Cai, Saugata Ghose, Erich F. Haratsch, Yixin Luo, and Onur Mutlu. 2017. Error characterization, mitigation, and recovery in flash-memory-based solid-state drives. Proc. IEEE 105, 9 (2017), 1666–1704.
[3]
Yu Cai, Erich F. Haratsch, Onur Mutlu, and Ken Mai. 2013. Threshold voltage distribution in MLC NAND flash memory: Characterization, analysis, and modeling. In Design, Automation & Test in Europe Conference & Exhibition (DATE’13). IEEE, 1285–1290.
[4]
Yu Cai, Yixin Luo, Saugata Ghose, and Onur Mutlu. 2015. Read disturb errors in MLC NAND flash memory: Characterization, mitigation, and recovery. In 45th Annual IEEE/IFIP International Conference on Dependable Systems and Networks. IEEE, 438–449.
[5]
Yu Cai, Yixin Luo, Erich F. Haratsch, Ken Mai, and Onur Mutlu. 2015. Data retention in MLC NAND flash memory: Characterization, optimization, and recovery. In IEEE 21st International Symposium on High Performance Computer Architecture (HPCA’15). IEEE, 551–563.
[6]
Yu Cai, Onur Mutlu, Erich F. Haratsch, and Ken Mai. 2013. Program interference in MLC NAND flash memory: Characterization, modeling, and mitigation. In IEEE 31st International Conference on Computer Design (ICCD’13). IEEE, 123–130.
[7]
Shuo-Han Chen, Ming-Chang Yang, and Yuan-Hao Chang. 2019. The best of both worlds: On exploiting bit-alterable NAND flash for lifetime and read performance optimization. In 56th ACM/IEEE Design Automation Conference (DAC’19). IEEE, 1–6.
[8]
Yue Cheng, Fred Douglis, Philip Shilane, Grant Wallace, Peter Desnoyers, and Kai Li. 2016. Erasing belady’s limitations: In search of flash cache offline optimality. In USENIX Annual Technical Conference (USENIXATC’16). 379–392.
[9]
Jinhua Cui, Youtao Zhang, Liang Shi, Chun Jason Xue, Jun Yang, Weiguang Liu, and Laurence T. Yang. 2020. Leveraging partial-refresh for performance and lifetime improvement of 3D NAND flash memory in cyber-physical systems. J. Syst. Archit. 103 (2020), 101685.
[10]
Lanlan Cui, Fei Wu, Xiaojian Liu, Meng Zhang, and Changsheng Xie. 2019. VaLLR: Threshold voltage distribution aware LLR optimization to improve LDPC decoding performance for 3D TLC NAND flash. In IEEE 37th International Conference on Computer Design (ICCD’19). IEEE, 668–671.
[11]
Yajuan Du, Deqing Zou, Qiao Li, Liang Shi, Hai Jin, and Chun Jason Xue. 2017. LaLDPC: Latency-aware LDPC for read performance improvement of solid state drives. In International Conference on Massive Storage Systems and Technology. 1–11.
[12]
Congming Gao, Min Ye, Qiao Li, Chun Jason Xue, Youtao Zhang, Liang Shi, and Jun Yang. 2019. Constructing large, durable and fast SSD system via reprogramming 3D TLC flash memory. In 52nd Annual IEEE/ACM International Symposium on Microarchitecture. 493–505.
[13]
Akira Goda. 2020. 3-D NAND technology achievements and future scaling perspectives. IEEE Trans. Electron Devices 67, 4 (2020), 1373–1381.
[14]
JESD218B.01. 2016. Solid-State Drive (SSD) Requirements and Endurance Test Method. Technical Report. JEDEC, Standard. Retrieved from https://www.jedec.org/standards-documents/docs/jesd218b01.
[15]
Dongku Kang, Woopyo Jeong, Chulbum Kim, Doo-Hyun Kim, Yong Sung Cho, Kyung-Tae Kang, Jinho Ryu, Kyung-Min Kang, Sungyeon Lee, Wandong Kim, et al. 2016. 256 Gb 3 b/cell V-NAND flash memory with 48 stacked WL layers. IEEE J. Solid-State Circ. 52, 1 (2016), 210–217.
[16]
Bryan S. Kim, Jongmoo Choi, and Sang Lyul Min. 2019. Design tradeoffs for SSD reliability. In 17th USENIX Conference on File and Storage Technologies (FAST’19). 281–294.
[17]
Hyunsuk Kim, Su-Jin Ahn, Yu Gyun Shin, Kyupil Lee, and Eunseung Jung. 2017. Evolution of NAND flash memory: From 2D to 3D as a storage market leader. In IEEE International Memory Workshop (IMW’17). IEEE, 1–4.
[18]
Juhyung Kim, Changseok Kang, Sung-Il Chang, Jongyeon Kim, Younseok Jeong, Chan Park, Joo-Heon Kang, Sang-Hoon Kim, Sunkyu Hwang, Byeong-In Choe, et al. 2010. New phenomena for the lifetime prediction of TANOS-based charge trap NAND flash memory. In 68th Device Research Conference. IEEE, 99–100.
[19]
Jaeho Kim, Kwanghyun Lim, Youngdon Jung, Sungjin Lee, Changwoo Min, and Sam H. Noh. 2019. Alleviating garbage collection interference through spatial separation in all flash arrays. In USENIX Annual Technical Conference (USENIXATC’19). 799–812.
[20]
Seungjae Lee, Chulbum Kim, Minsu Kim, Sung-min Joe, Joonsuc Jang, Seungbum Kim, Kangbin Lee, Jisu Kim, Jiyoon Park, Han-Jun Lee, et al. 2018. A 1Tb 4b/cell 64-stacked-WL 3D NAND flash memory with 12MB/s program throughput. In IEEE International Solid-State Circuits Conference (ISSCC’18). IEEE, 340–342.
[21]
Fei Li, Youyou Lu, Zhongjie Wu, and Jiwu Shu. 2019. ASCache: An approximate SSD cache for error-tolerant applications. In 56th Annual Design Automation Conference 2019. 1–6.
[22]
Haibo Li. 2016. Modeling of threshold voltage distribution in NAND flash memory: A Monte Carlo method. IEEE Trans. Electron Devices 63, 9 (2016), 3527–3532.
[23]
Qiao Li, Liang Shi, Chun Jason Xue, Qingfeng Zhuge, and Edwin H.-M. Sha. 2017. Improving LDPC performance via asymmetric sensing level placement on flash memory. In 22nd Asia and South Pacific Design Automation Conference (ASP-DAC’17). IEEE, 560–565.
[24]
J. Liebault, D. Moya-Siesse, J. Bernardini, and G. Moya. 2002. Charge trapping characterization in the thin oxide layer/non-conductive substrate system. Surf. Interf. Anal. 34, 1 (2002), 668–671.
[25]
Weihua Liu, Fei Wu, Meng Zhang, Yifei Wang, Zhonghai Lu, Xiangfeng Lu, and Changsheng Xie. 2019. Characterizing the reliability and threshold voltage shifting of 3D charge trap NAND flash. In Design, Automation & Test in Europe Conference & Exhibition (DATE’19). IEEE, 312–315.
[26]
Weihua Liu, Fei Wu, Meng Zhang, Chengmo Yang, Zhonghai Lu, Jiguang Wan, and Changsheng Xie. 2020. DEPS: Exploiting a dynamic error prechecking scheme to improve the read performance of SSD. IEEE Trans. Comput.-Aid. Des. Integ. Circ. Syst. 40, 1 (2020), 66–77.
[27]
Weihua Liu, Fei Wu, Jian Zhou, Meng Zhang, Chengmo Yang, Zhonghai Lu, Yu Wang, and Changsheng Xie. 2021. Modeling of threshold voltage distribution in 3D NAND flash memory. In Design, Automation & Test in Europe Conference & Exhibition (DATE’21). IEEE, 1729–1732.
[28]
Yixin Luo, Saugata Ghose, Yu Cai, Erich Haratsch, and Onur Mutlu. 2018. HeatWatch: Improving 3D NAND flash memory device reliability by exploiting self-recovery and temperature awareness. 504–517. DOI:
[29]
Yixin Luo, Saugata Ghose, Yu Cai, Erich F. Haratsch, and Onur Mutlu. 2016. Enabling accurate and practical online flash channel modeling for modern MLC NAND flash memory. IEEE J. Select. Areas Commun. 34, 9 (2016), 2294–2311.
[30]
Fabio Margaglia, Gala Yadgar, Eitan Yaakobi, Yue Li, Assaf Schuster, and André Brinkmann. 2016. The devil is in the details: Implementing flash page reuse with WOM codes. In 14th USENIX Conference on File and Storage Technologies (FAST’16). 95–109.
[31]
Rino Micheloni et al. 2016. 3D Flash Memories. Springer.
[32]
Neal R. Mielke, Robert E. Frickey, Ivan Kalastirsky, Minyan Quan, Dmitry Ustinov, and Venkatesh J. Vasudevan. 2017. Reliability of solid-state drives based on NAND flash memory. Proc. IEEE 105, 9 (2017), 1725–1750.
[33]
Shiqiang Nie, Youtao Zhang, Weiguo Wu, and Jun Yang. 2020. Layer RBER variation aware read performance optimization for 3D flash memories. In 57th ACM/IEEE Design Automation Conference (DAC’20). IEEE, 1–6.
[34]
Nikolaos Papandreou, Thomas Parnell, Haralampos Pozidis, Thomas Mittelholzer, Evangelos Eleftheriou, Charles Camp, Thomas Griffin, Gary Tressler, and Andrew Walls. 2014. Using adaptive read voltage thresholds to enhance the reliability of MLC NAND flash memory systems. In 24th Great Lakes Symposium on VLSI. 151–156.
[35]
Nikolaos Papandreou, Haralampos Pozidis, Thomas Parnell, Nikolas Ioannou, Roman Pletka, Sasa Tomic, Patrick Breen, Gary Tressler, Aaron Fry, and Timothy Fisher. 2019. Characterization and analysis of bit errors in 3D TLC NAND flash memory. In IEEE International Reliability Physics Symposium (IRPS’19). IEEE, 1–6.
[36]
Thomas Parnell, Nikolaos Papandreou, Thomas Mittelholzer, and Haralampos Pozidis. 2014. Modelling of the threshold voltage distributions of sub-20nm NAND flash memory. In IEEE Global Communications Conference. IEEE, 2351–2356.
[37]
Borja Peleato, Rajiv Agarwal, John M. Cioffi, Minghai Qin, and Paul H. Siegel. 2015. Adaptive read thresholds for NAND flash. IEEE Trans. Commun. 63, 9 (2015), 3069–3081.
[38]
Tomonori Takahashi, Senju Yamazaki, and Ken Takeuchi. 2016. Data-retention time prediction of long-term archive SSD with flexible-nLC NAND flash. In IEEE International Reliability Physics Symposium (IRPS’16). IEEE, 6C–5.
[39]
Kunliang Wang, Gang Du, Zhiyuan Lun, Wangyong Chen, and Xiaoyan Liu. 2019. Modeling of program Vth distribution for 3-D TLC NAND flash memory. Sci. China Inform. Sci. 62, 4 (2019), 42401.
[40]
Qiuping Wang, Jinhong Li, Wen Xia, Erik Kruus, Biplob Debnath, and Patrick P. C. Lee. 2020. Austere flash caching with deduplication and compression. In USENIX Annual Technical Conference (USENIXATC’20). 713–726.
[41]
Fei Wu, Meng Zhang, Yajuan Du, Weihua Liu, Zuo Lu, Jiguang Wan, Zhihu Tan, and Changsheng Xie. 2019. Using error modes aware LDPC to improve decoding performance of 3-D TLC NAND flash. IEEE Trans. Comput.-Aid. Des. Integ. Circ. Syst. 39, 4 (2019), 909–921.
[42]
Fei Wu, Yue Zhu, Qin Xiong, Zhonghai Lu, You Zhou, Weizhen Kong, and Changsheng Xie. 2018. Characterizing 3D charge trap NAND flash: Observations, analyses and applications. In IEEE 36th International Conference on Computer Design (ICCD’18). IEEE, 381–388.
[43]
Qin Xiong, Fei Wu, Zhonghai Lu, Yue Zhu, You Zhou, Yibing Chu, Changsheng Xie, and Ping Huang. 2018. Characterizing 3D floating gate NAND flash: Observations, analyses, and implications. ACM Trans. Stor. 14, 2 (2018), 1–31.
[44]
Meng Zhang, Fei Wu, Yajuan Du, Weihua Liu, and Changsheng Xie. 2018. Pair-bit errors aware LDPC decoding in MLC NAND flash memory. IEEE Trans. Comput.-aid. Des. Integ. Circ. Syst. 38, 12 (2018), 2312–2320.
[45]
Meng Zhang, Fei Wu, Qin Yu, Weihua Liu, Lanlan Cui, Yahui Zhao, and Changsheng Xie. 2020. BeLDPC: Bit errors aware adaptive rate LDPC codes for 3D TLC NAND flash memory. In Design, Automation & Test in Europe Conference & Exhibition (DATE’20). IEEE, 302–305.
[46]
Meng Zhang, Fei Wu, Qin Yu, Weihua Liu, Yifan Wang, and Changsheng Xie. 2020. Exploiting error characteristic to optimize read voltage for 3-D NAND flash memory. IEEE Trans. Electron Devices 67, 12 (2020), 5490–5496.
[47]
Nannan Zhao, Ali Anware, Yue Cheng, Mohammed Salman, Daping Li, Jiguang Wan, Changsheng Xie, Xubin He, Feiyi Wang, and Ali Butt. 2018. Chameleon: An adaptive wear balancer for flash clusters. In IEEE International Parallel and Distributed Processing Symposium (IPDPS’18). IEEE, 1163–1172.

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Published In

cover image ACM Transactions on Storage
ACM Transactions on Storage  Volume 18, Issue 2
May 2022
248 pages
ISSN:1553-3077
EISSN:1553-3093
DOI:10.1145/3522733
  • Editor:
  • Sam H. Noh
Issue’s Table of Contents

Publisher

Association for Computing Machinery

New York, NY, United States

Publication History

Published: 10 March 2022
Accepted: 01 September 2021
Revised: 01 July 2021
Received: 01 September 2020
Published in TOS Volume 18, Issue 2

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Author Tags

  1. 3D CT NAND flash
  2. performance
  3. reliability
  4. threshold voltage
  5. characterization

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  • Research-article
  • Refereed

Funding Sources

  • National Natural Science Foundation of China
  • Fundamental Research Funds for the Central Universities, HUST
  • Key Project of Shandong Wisdom Joint Fund
  • 111 Project

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