Xingyu Fang
ABSTRACT
In this paper, a novel reverse-conducting IGBT (RC-IGBT) with a built-in channel diode is proposed for optimizing the third quadrant working performance via Sentaurus TCAD simulation tools. By reducing the oxide thickness of dummy gate (tco), the proposed structure can obtain a lower turn-on voltage when working as a diode. Compared to body parasitic diode, the unipolar conduction resulted by channel diode optimizes reverse recovery performance and switching characteristics effectively, such as about 50% and 17% decrease of reverse recovery charge (Qrr) and peak reverse recovery current (Irrm), respectively. When the device works in forward conduction, the static parameters such as the breakdown voltage and the collector-emitter saturation voltage are similar to conventional IGBT. The gate charge (Qg) and gate-to-collector charge (Qgd) are reduced by a factor of 3.8 and 2.1, and the input capacitance (Ciss), reverse transfer capacitance (Crss) are reduced by about 6.5 times and 1.9 times, respectively.
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Index Terms
- A Novel Reverse-Conducting IGBT With Built-In Channel Diode
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