Yingying Lei
ABSTRACT
A novel 1200 V 4H-SiC junction barrier Schottky diode (JBS) with built-in MOSFET(MJBS) structure is proposed and simulated with Sentaurus TCAD. The characteristics of forward conduction and reverse blocking of conventional JBS and proposed MJBS with different channel widths are investigated. The MJBS exhibits a lower forward voltage drop and better reverse breakdown characteristics than that of the JBS, which attributes to high-reliability applications. In addition, a local heavy doping concentration is adopted in MOSFET channel region, which can reduce the on-state resistance of the gate accumulation layer and reduce the possibility of early device breakdown due to the increase of channel doping concentration.
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Index Terms
- Investigation of 1200 V 4H-SiC Junction Barrier Schottky Diode with Built-in MOSFET
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