Ting Li
ABSTRACT
Single Event sensitivity research is of great significance for optimizing the device structure and improving the single event resistance of the device. In this paper, single event current responses of planar gate power MOSFET at different single event incident positions for different cell distribution and different width length ratio under vertical incident are simulates and collected charges are calculated. Simulation results show, for square cell with tetragonal distribution, the incident position with peak collected charge usually located either at the points where the electric field is high symmetrical, or at the channel midline. But as the cell length increases, single event burnout has been taken place when heavy particle incident at JFET midline. This shows that perhaps the strip-shaped cells are indeed benefit to uniform electric field distribution, but they are not necessarily the best choice for resistance single-event burnout. Finally, Hexagon distribution of square cell can reduce the sensitivity of single event effects near the corners of the square well, but the single event effects at other locations are not significantly improved compared with the tetragon distribution.
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Index Terms
- 3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET
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