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60GHz, 12mW, 20 dB Gain, CMOS mm-wave LNA with 6.3-dB NF

Published: 30 September 2022 Publication History

Abstract

One important building block for an integrated 60GHz millimeter-wave CMOS radio transceiver is low-noise amplifier (LNA). In this paper, two- stage cascode LNA with first stage as CS inductive source degeneration has been employed. Gain boosting technique is used to increase gain, where an inductor is attached to the gate of,common gate stage and also network to provide positive feedback. Besides that, SNM (simultaneous noise and input conjugate impedance) matching is used. This design is simulated in 130nm bulk CMOS TSMC process by using cadence virtuoso. Each stage is biased separately by using supply voltage of 1.2V, where = 727mV for an individual stage is generated through this biasing network. Performance metrics of this design are peak gain of 20.3dB, an output-referred 1dB compression point of -22.6dBm at 60GHz, noise figure is 6.3 dB and maximum power dissipation () is 12mW.

References

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    cover image ACM Other conferences
    IECC '22: Proceedings of the 4th International Electronics Communication Conference
    July 2022
    106 pages
    ISBN:9781450397131
    DOI:10.1145/3560089
    Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. Copyrights for components of this work owned by others than ACM must be honored. Abstracting with credit is permitted. To copy otherwise, or republish, to post on servers or to redistribute to lists, requires prior specific permission and/or a fee. Request permissions from [email protected]

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    Published: 30 September 2022

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    Author Tags

    1. 60GHz transceiver
    2. Gain boosting technique
    3. Inductive source degeneration
    4. SNM (Simultaneous noise and input conjugate impedance) matching

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