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An On-Line Aging Detection and Tolerance Framework for Improving Reliability of STT-MRAMs

Published: 31 January 2023 Publication History

Abstract

Spin-transfer-torque magnetic random-access memory (STT-MRAM) is one of the most promising emerging memories for on-chip memory. However, the magnetic tunnel junction (MTJ) in the STT-MRAM suffers from several reliability threats which degrade the endurance, create defects, and cause memory failure. One of the primary reliability issues comes from time-dependent dielectric breakdown (TDDB) on MTJ, which deviates resistance value of MTJ over time and may lead to reading error. To overcome this challenge, in this paper we present an on-line aging detection and tolerance framework to dynamically monitor the electrical parameter deviations and provide appropriate compensation to avoid reading error. The on-line aging detection mechanism can identify aged words by monitoring read current and then the aging tolerance mechanism can adjust the reference resistance of the sensing amplifier to compensate the aging-induced resistance drop of MTJ. In comparison with existing testing-based aging detection techniques, our mechanism can operate on-line with read operations for both aging detection and tolerance simultaneously with negligible performance overhead. Simulation and analysis results show that the proposed techniques can successfully detect 99% aging words under process variation and achieve at most 25% reliability improvement of STT-MRAMs.

References

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  • (2023)Reliability of Computing-In-Memories: Threats, Detection Methods, and Mitigation Approaches2023 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)10.1109/DFT59622.2023.10313545(1-6)Online publication date: 3-Oct-2023

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          cover image ACM Conferences
          ASPDAC '23: Proceedings of the 28th Asia and South Pacific Design Automation Conference
          January 2023
          807 pages
          ISBN:9781450397834
          DOI:10.1145/3566097
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          Published: 31 January 2023

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          Author Tags

          1. STT-MRAM
          2. TDDB
          3. aging detection mechanism
          4. aging tolerance mechanism
          5. reliability enhancement

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          ASPDAC '23 Paper Acceptance Rate 102 of 328 submissions, 31%;
          Overall Acceptance Rate 466 of 1,454 submissions, 32%

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          • (2023)Reliability of Computing-In-Memories: Threats, Detection Methods, and Mitigation Approaches2023 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)10.1109/DFT59622.2023.10313545(1-6)Online publication date: 3-Oct-2023

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