Tao He
ABSTRACT
In this work, a new operational amplifier using 0.13 μm SOI technology is proposed based on dynamic threshold voltage transistors (DTMOS) for low voltage applications such as the two stages operational amplifier of ultra-low power consumption Internet of Things (IoT) nodes. The operational amplifier uses a two stages configuration, where differential input transistor pairs followed by a single ended class AB output and the input stage uses a DTMOS device structure. Simulation results show that the novel designed operational amplifier has a loop gain of 65.5 dB, a phase margin of 67 ° and unit gain frequency of 37.37 MHz under a 5 pf and 10 kΩ load, using the 0.13 μm partially depleted (PD) SOI technology. In addition, if a lower operating voltage is applied, the power consumption of the circuit low voltage operational amplifier can be further reduced.
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