Ayush Dahiya
Abstract
A modified decoupled sense amplifier (MDSA) and modified decoupled sense amplifier with NMOS foot-switch is proposed for improved sensing in differential SRAM for low-voltage operation at the 22-nm technology node. The MDSA and MDSANF both offer notable improvements to read delay over conventional voltage and current sense amplifiers. At an operating voltage of 0.8 V, the MDSA exhibited a reduced delay of 28.6%, 41.79%, 37.74%, and 30.94% compared to modified clamped sense amplifier (MCSA), double tail sense amplifier (DTSA), modified hybrid sense amplifier (MHSA), and conventional latch-type sense amplifier (LSA), respectively. Similarly, the MDSANF demonstrated a delay reduction of 26.13%, 39.78%, 35.58%, and 28.55% over MCSA, DTSA, MHSA, and LSA, respectively. To validate the performance, the MDSA and MDSANF are evaluated using the variation in delay and power consumption across various supply voltages, process corners, input differential bit line voltage (ΔVBL), bit line capacitance (CBL), and the sizing of decoupling transistors. Monte Carlo simulations were conducted to analyse the impact of voltage threshold variations on transistor mismatch which leads to an increased occurrence of read failures and a decline in SRAM yield. The performance analysis of various voltage and current sense amplifiers is presented along with MDSA and MDSANF. Area consideration for selection of sensing scheme is important and as such layout of MDSA and MDSANF was performed conforming to the design rules and estimated area for MDSA is 0.297 μm2 whereas MDSANF occupies 0.5192 μm2.
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Index Terms
- Modified Decoupled Sense Amplifier with Improved Sensing Speed for Low-Voltage Differential SRAM
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